TRANSPORT-COEFFICIENTS OF INAS EPILAYERS

被引：98

作者：

WIEDER, HH ^{[1
]}

机构：

[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 04期

关键词：

D O I：

10.1063/1.1655441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：206 / 208

页数：3

共 12 条

[1] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

CRONIN, GR ;

CONRAD, RW ;

BORELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1336-&

[2] SURFACE CHARGE EFFECTS ON RESISTIVITY AND HALL-COEFFICIENT OF THIN SILICON-ON-SAPPHIRE FILMS [J].

HAM, WE .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :440-+

[3]

HILSUM C, 1961, SEMICONDUCTING 3-V C

[4]

KORENBLIT LL, 1964, SOV PHYS-SOL STATE, V6, P438

[5]

MADELUNG O, 1964, PHYSICS 3-5 COMPOUND

[6] PREPARATION AND PROPERTIES OF EPITAXIAL INAS [J].

MCCARTHY, JP .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :649-&

[7] ZUM MECHANISMUS DER WIDERSTANDSANDERUNG IM MAGNETFELD [J].

NEDOLUHA, A ;

KOCH, KM .

ZEITSCHRIFT FUR PHYSIK, 1952, 132 (05) :608-620

[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1958, 110 (06) :1254-1262

[9]

Tietjen J. J., 1970, RCA Review, V31, P635

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].

TIETJEN, JJ ;

AMICK, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&

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