STRUCTURAL STUDY OF DEFECTS INDUCED DURING CURRENT INJECTION TO II-VI BLUE-LIGHT EMITTER

被引:67
作者
TOMIYA, S
MORITA, E
UKITA, M
OKUYAMA, H
ITOH, S
NAKANO, K
ISHIBASHI, A
机构
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240, 174, Fujitsuka-cho
关键词
D O I
10.1063/1.113238
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II-VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45°to the (001) junction plane.© 1995 American Institute of Physics.
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页码:1208 / 1210
页数:3
相关论文
共 13 条
[1]   DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].
GUHA, S ;
DEPUYDT, JM ;
HAASE, MA ;
QIU, J ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109
[2]   ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES [J].
GUHA, S ;
DEPUYDT, JM ;
QIU, J ;
HOFLER, GE ;
HAASE, MA ;
WU, BJ ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1993, 63 (22) :3023-3025
[3]   BLUE-GREEN LASER-DIODES [J].
HAASE, MA ;
QIU, J ;
DEPUYDT, JM ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274
[4]   MICROSTRUCTURE STUDY OF A DEGRADED PSEUDOMORPHIC SEPARATE-CONFINEMENT HETEROSTRUCTURE BLUE-GREEN LASER-DIODE [J].
HUA, GC ;
OTSUKA, N ;
GRILLO, DC ;
FAN, Y ;
HAN, J ;
RINGLE, MD ;
GUNSHOR, RL ;
HOVINEN, M ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1994, 65 (11) :1331-1333
[5]   DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].
HUTCHINSON, PW ;
DOBSON, PS ;
OHARA, S ;
NEWMAN, DH .
APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252
[6]   ZNCDSE/ZNSSE/ZNMGSSE SCH LASER-DIODE WITH A GAAS BUFFER LAYER [J].
ITOH, S ;
NAKAYAMA, N ;
MATSUMOTO, S ;
NAGAI, M ;
NAKANO, K ;
OZAWA, M ;
OKUYAMA, H ;
TOMIYA, S ;
OHATA, T ;
IKEDA, M ;
ISHIBASHI, A ;
MORI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7A) :L938-L940
[7]   DISLOCATION NUCLEATION MECHANISM AND DOPING EFFECT IN P-TYPE ZNSE/GAAS [J].
KUO, LH ;
SALAMANCARIBA, L ;
DEPUYDT, JM ;
CHENG, H ;
QIU, J .
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (03) :275-281
[8]   CONTINUOUS-WAVE OPERATION OF 489.9NM BLUE LASER-DIODE AT ROOM-TEMPERATURE [J].
NAKAYAMA, N ;
ITOH, S ;
OKUYAMA, H ;
OZAWA, M ;
OHATA, T ;
NAKANO, K ;
IKEDA, M ;
ISHIBASHI, A ;
MORI, Y .
ELECTRONICS LETTERS, 1993, 29 (25) :2194-2195
[9]   ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].
NAKAYAMA, N ;
ITOH, S ;
OHATA, T ;
NAKANO, K ;
OKUYAMA, H ;
OZAWA, M ;
ISHIBASHI, A ;
IKEDA, M ;
MORI, Y .
ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489
[10]  
OKUYAMA H, 1991, JPN J APPL PHYS, V30, pL152