INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES

被引：1
|
作者：
PATRIKAR, RM
LAL, R
VASI, J
机构：
[1] Department of Electrical Engineering, Indian Institute of Technology, Bombay
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期
关键词：
D O I：
10.1016/0038-1101(94)00089-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.
引用
收藏
页码：477 / 480
页数：4
相关论文
共 50 条
12345