INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES

被引：1

作者：

PATRIKAR, RM

LAL, R

VASI, J

机构：

[1] Department of Electrical Engineering, Indian Institute of Technology, Bombay

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)00089-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.

引用

页码：477 / 480

页数：4

共 50 条

[21] Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing
Chim, WK
Yeo, BP
Lim, PS
Chan, DSH
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) : 363 - 366
[22] GENERATION OF INTERFACE STATES AND OXIDE CHARGES IN N-MOS STRUCTURES DUE TO HIGH ELECTRIC-FIELD
TOLPADI, A
SRIVASTAVA, RS
SOLID-STATE ELECTRONICS, 1989, 32 (10) : 919 - 921
[23] INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
BELKOUCH, S
JEAN, C
AKTIK, C
AMEZIANE, EL
APPLIED PHYSICS LETTERS, 1995, 67 (04) : 530 - 532
[24] Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics
Borse, DG
Vaidya, SJ
Chandorkar, AN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 699 - 701
[25] Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current
Chim, WK
Tan, YN
JOURNAL OF APPLIED PHYSICS, 2002, 92 (11) : 6636 - 6645
[26] EFFECTS OF HIGH-FIELD STRESSING ON THE CHANNEL FREQUENCY-RESPONSE OF MOSFETS
CHOW, PD
WANG, KL
SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1005 - 1014
[27] High-field degradation of poly-Si gate p-MOS and n-MOS devices with nitrided oxides
Krause, Gernot
Beug, M. Florian
Ferretti, Ruediger
Prasad, Sharad
Hofmann, Karl R.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (03) : 473 - 478
[28] GATE OXIDE THICKNESS DEPENDENCE OF HIGH-FIELD-INDUCED INTERFACE STATE GENERATION IN THIN THERMAL OXIDES
LO, GQ
KWONG, DL
ELECTRONICS LETTERS, 1990, 26 (15) : 1124 - 1125
[29] A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
Degraeve, R
DeBlauwe, J
Ogier, JL
Roussel, P
Groeseneken, G
Maes, HE
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 327 - 330
[30] Polysilicon resistors and interconnects for VLSI: High-field conduction and high-current stressing effects
Lahiri, SK
SEMICONDUCTOR DEVICES, 1996, 2733 : 525 - 532

← 1 2 3 4 5 →