DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS

被引：1
|
作者：
HUANG, XG
CAI, ZG
YU, ZX
机构：
[1] Ultrafast Laser Spectroscopy Laboratory, Zhongshan University, Guangzhou
来源：
JOURNAL OF LUMINESCENCE | 1994年 / 60-1卷
关键词：
D O I：
10.1016/0022-2313(94)90167-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A theory on the dynamics of localized exciton recombination and their intralayer migration in GaAs quantum wells is developed. Non-exponential photoluminescence decay is successfully interpreted by exciton recombination and its influence on the quasi-equilibrium localized exciton population. The recombination rate and the effective down-migration rate can be obtained.
引用
收藏
页码：368 / 370
页数：3
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