DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS

被引：1
|
作者：
HUANG, XG
CAI, ZG
YU, ZX
机构：
[1] Ultrafast Laser Spectroscopy Laboratory, Zhongshan University, Guangzhou
来源：
JOURNAL OF LUMINESCENCE | 1994年 / 60-1卷
关键词：
D O I：
10.1016/0022-2313(94)90167-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A theory on the dynamics of localized exciton recombination and their intralayer migration in GaAs quantum wells is developed. Non-exponential photoluminescence decay is successfully interpreted by exciton recombination and its influence on the quasi-equilibrium localized exciton population. The recombination rate and the effective down-migration rate can be obtained.
引用
收藏
页码：368 / 370
页数：3
相关论文
共 50 条
  • [21] Exciton migration and recombination enhancement in GaAs/AlAs single quantum wells under resonant excitation.
    Yu, H
    Murray, R
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1791 - 1795
  • [22] EXCITON DISPERSION IN A STRUCTURE OF N-COUPLED MULTIPLE-QUANTUM WELLS
    AN, NB
    HANAMURA, E
    PHYSICAL REVIEW B, 1995, 51 (16): : 11187 - 11189
  • [23] Polariton Characteristics of Photoluminescence Dynamics of Exciton-Exciton Scattering in GaAs/AlAs Multiple Quantum Wells
    Furukawa, Yoshiaki
    Takeuchi, Hideo
    Nakayama, Masaaki
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2014, 83 (05)
  • [24] Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
    Kaschner, A
    Lüttgert, T
    Born, H
    Hoffmann, A
    Egorov, AY
    Riechert, H
    APPLIED PHYSICS LETTERS, 2001, 78 (10) : 1391 - 1393
  • [25] Free versus localized exciton recombination in Zn1-xCdxSe/ZnSe multiple quantum wells
    Lomascolo, M
    DiDio, M
    Greco, D
    Calcagnile, L
    Cingolani, R
    Vanzetti, L
    Sorba, L
    Franciosi, A
    APPLIED PHYSICS LETTERS, 1996, 69 (08) : 1145 - 1147
  • [26] MAGNETO-RAMAN SCATTERING IN GAAS/ALAS MULTIPLE-QUANTUM WELLS
    CROS, A
    RUF, T
    SPITZER, J
    CARDONA, M
    CANTARERO, A
    PHYSICAL REVIEW B, 1994, 50 (04): : 2325 - 2332
  • [27] Exciton dynamics in the presence of an electron gas in GaAs quantum wells
    Bajoni, D.
    Senellart, P.
    Perrin, M.
    Lemaitre, A.
    Sermage, B.
    Bloch, J.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (10): : 2384 - 2388
  • [28] Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells
    Zheng, WM
    Halsall, MP
    Harmer, P
    Harrison, P
    Steer, MJ
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6039 - 6042
  • [29] Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells
    Zheng, Wei-Min
    Cong, Wei-Yan
    Li, Su-Mei
    Wang, Ai-Fang
    Li, Bin
    Huang, Hai-Bei
    CHINESE PHYSICS B, 2018, 27 (01)
  • [30] Exciton dynamics in ultrathin InAs/GaAs quantum-wells
    Brubach, J
    Haverkort, JEM
    Wolter, JH
    Wang, PD
    Ledentsov, NN
    Torres, CMS
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 283 - 288
12345