DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS

被引:1
作者
HUANG, XG
CAI, ZG
YU, ZX
机构
[1] Ultrafast Laser Spectroscopy Laboratory, Zhongshan University, Guangzhou
关键词
D O I
10.1016/0022-2313(94)90167-8
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A theory on the dynamics of localized exciton recombination and their intralayer migration in GaAs quantum wells is developed. Non-exponential photoluminescence decay is successfully interpreted by exciton recombination and its influence on the quasi-equilibrium localized exciton population. The recombination rate and the effective down-migration rate can be obtained.
引用
收藏
页码:368 / 370
页数:3
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