DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS

被引：1

作者：

HUANG, XG

CAI, ZG

YU, ZX

机构：

[1] Ultrafast Laser Spectroscopy Laboratory, Zhongshan University, Guangzhou

来源：

JOURNAL OF LUMINESCENCE | 1994年 / 60-1卷

关键词：

D O I：

10.1016/0022-2313(94)90167-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A theory on the dynamics of localized exciton recombination and their intralayer migration in GaAs quantum wells is developed. Non-exponential photoluminescence decay is successfully interpreted by exciton recombination and its influence on the quasi-equilibrium localized exciton population. The recombination rate and the effective down-migration rate can be obtained.

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收藏

页码：368 / 370

页数：3

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