共 50 条
- [41] MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 574 - 577
- [44] EFFECT OF VARIATIONS IN TEMPERATURE AND IN MATERIAL PARAMETERS ON VELOCITY-FIELD CHARACTERISTIC OF GALLIUM-ARSENIDE RADIO AND ELECTRONIC ENGINEER, 1973, 43 (06): : 389 - 393
- [45] Nano Focus: Tellurium binds bismuth-telluride and gallium-arsenide thermoelectric material MRS Bulletin, 2013, 38 : 360 - 360
- [46] METHOD OF SPECTRAL ANALYSIS FOR GALLIUM ARSENIDE FILMS ON A SUBSTRATE OF SAME MATERIAL INDUSTRIAL LABORATORY, 1967, 33 (09): : 1283 - &
- [48] METHOD FOR SELECTIVE SUBSTRATE REMOVAL FROM THIN P-TYPE GALLIUM-ARSENIDE LAYERS JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1974, 7 (06): : 493 - 495
- [50] INVESTIGATION OF TRANSITIONAL LAYERS IN EPITAXIAL GALLIUM-ARSENIDE - INFLUENCE OF SUBSTRATE TREATMENT ON DISTRIBUTION OF ELECTRONS AND IMPURITIES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (05): : 138 - 139