HEAT-SINK SUBSTRATE MATERIAL CUTS THE COSTS OF GALLIUM-ARSENIDE FABRICATION

被引：0
|
作者：
MALINIAK, D
机构：
来源：
ELECTRONIC DESIGN | 1995年 / 43卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：42 / 44
页数：3
相关论文
共 50 条
  • [31] THE FABRICATION AND USE OF SILICON AND GALLIUM-ARSENIDE ION-SOURCE EXTRACTION GRIDS
    SPEIDELL, JL
    HARPER, JME
    CUOMO, JJ
    KLEINSASSER, AW
    KAUFMAN, HR
    TUTTLE, AH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 824 - 827
  • [32] A NEW METHOD FOR THE FABRICATION OF SUB-MICRON THICK GALLIUM-ARSENIDE MEMBRANES
    LEE, KC
    SILCOX, J
    LEE, CA
    APPLIED PHYSICS LETTERS, 1983, 43 (05) : 488 - 489
  • [33] HEAT SINK SUBSTRATE SAVES MACHINING COSTS
    CHIN, S
    ELECTRONIC PRODUCTS MAGAZINE, 1993, 36 (04): : 22 - 22
  • [34] NEW OPTICAL-ABSORPTION LINES IN HEAT-TREATED GALLIUM-ARSENIDE
    SUEZAWA, M
    SUMINO, K
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 992 - 994
  • [35] DEFECT REACTIONS BY HEAT-TREATMENT OF HEAVILY SILICON DOPED GALLIUM-ARSENIDE
    OKADA, Y
    FUJII, K
    ORITO, F
    MUTO, S
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1675 - 1680
  • [36] OPTICALLY CONTROLLED MEMORY-ELEMENT BASED ON MNOS STRUCTURE WITH GALLIUM-ARSENIDE SUBSTRATE
    BULANKOV, NI
    ZHURAVOV, VD
    PLOTNIKOV, AF
    SELEZNEV, VN
    TOKARCHUK, DN
    FERCHEV, GP
    KVANTOVAYA ELEKTRONIKA, 1976, 3 (09): : 2078 - 2080
  • [37] NUMERICAL-SIMULATION OF HEAT-TRANSFER IN LEC GROWTH OF GALLIUM-ARSENIDE
    NICODEME, P
    DUPRET, F
    CROCHET, MJ
    FARGES, JP
    NAGEL, G
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 471 - 476
  • [38] HEAT-TREATMENT OF BULK GALLIUM-ARSENIDE USING A PHOSPHOSILICATE GLASS CAP
    MATHUR, G
    WHEATON, ML
    BORREGO, JM
    GHANDHI, SK
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4711 - 4714
  • [39] TEMPERATURE-DEPENDENCE OF THE CONTROL OF A TRANSISTOR BY A SEMIINSULATING SUBSTRATE IN INTEGRATED GALLIUM-ARSENIDE CIRCUITS
    GERGEL, VA
    LUKYANCHENKO, AI
    SOLYAKOV, AN
    ILICHEV, EA
    POLTORATSKII, EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 1007 - 1009
  • [40] EFFECT OF TREATMENT OF THE SUBSTRATE SURFACE ON THE INITIAL-STAGES OF FORMATION OF GALLIUM-ARSENIDE FILMS
    BOLKHOVITYANOV, YB
    RUDAYA, NS
    YUDAEV, VI
    INORGANIC MATERIALS, 1993, 29 (01) : 21 - 25
12345