首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
HEAT-SINK SUBSTRATE MATERIAL CUTS THE COSTS OF GALLIUM-ARSENIDE FABRICATION
被引:0
|
作者
:
MALINIAK, D
论文数:
0
引用数:
0
h-index:
0
MALINIAK, D
机构
:
来源
:
ELECTRONIC DESIGN
|
1995年
/ 43卷
/ 06期
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:42 / 44
页数:3
相关论文
共 50 条
[21]
INFLUENCE OF SUBSTRATE CHARACTERISTICS ON CONTACT ANGLES BETWEEN LIQUID GALLIUM AND GALLIUM-ARSENIDE CRYSTALS
KASHKOOLI, IY
论文数:
0
引用数:
0
h-index:
0
机构:
LOCKHEED RES LAB, PALO ALTO, CA USA
KASHKOOLI, IY
MUNIR, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
LOCKHEED RES LAB, PALO ALTO, CA USA
MUNIR, ZA
WILLIAMS, L
论文数:
0
引用数:
0
h-index:
0
机构:
LOCKHEED RES LAB, PALO ALTO, CA USA
WILLIAMS, L
JOURNAL OF MATERIALS SCIENCE,
1974,
9
(04)
: 538
-
542
[22]
DEGRADATION OF SEMIINSULATING GALLIUM-ARSENIDE DURING HEAT-TREATMENT
AIBAZOV, IF
论文数:
0
引用数:
0
h-index:
0
AIBAZOV, IF
MIKHRIN, SB
论文数:
0
引用数:
0
h-index:
0
MIKHRIN, SB
SAMORUKOV, BE
论文数:
0
引用数:
0
h-index:
0
SAMORUKOV, BE
SEMICONDUCTORS,
1995,
29
(01)
: 85
-
86
[23]
DIELECTRIC COATINGS ON GALLIUM-ARSENIDE DURING HEAT-TREATMENT
ARDYSHEV, VM
论文数:
0
引用数:
0
h-index:
0
ARDYSHEV, VM
MAMONTOV, AP
论文数:
0
引用数:
0
h-index:
0
MAMONTOV, AP
MELEV, VG
论文数:
0
引用数:
0
h-index:
0
MELEV, VG
FILIMONOVA, ID
论文数:
0
引用数:
0
h-index:
0
FILIMONOVA, ID
INORGANIC MATERIALS,
1986,
22
(01)
: 124
-
126
[24]
X-RAY TOPOGRAPHY OF GALLIUM-ARSENIDE USED FOR MESFET FABRICATION
CLACKSON, SG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON,ROYAL HOLLOWAY & BEDFORD NEW COLL,DEPT PHYS,EGHAM TW20 0EX,SURREY,ENGLAND
CLACKSON, SG
MOORE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON,ROYAL HOLLOWAY & BEDFORD NEW COLL,DEPT PHYS,EGHAM TW20 0EX,SURREY,ENGLAND
MOORE, M
KITCHING, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON,ROYAL HOLLOWAY & BEDFORD NEW COLL,DEPT PHYS,EGHAM TW20 0EX,SURREY,ENGLAND
KITCHING, SA
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1992,
7
(01)
: 12
-
20
[25]
Tellurium binds bismuth-telluride and gallium-arsenide thermoelectric material
Marquardt, Meg
论文数:
0
引用数:
0
h-index:
0
Marquardt, Meg
MRS BULLETIN,
2013,
38
(05)
: 360
-
360
[26]
DEVICE-RELATED MATERIAL PROPERTIES OF HEAVILY DOPED GALLIUM-ARSENIDE
LUNDSTROM, MS
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
LUNDSTROM, MS
KLAUSMEIERBROWN, ME
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
KLAUSMEIERBROWN, ME
MELLOCH, MR
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
MELLOCH, MR
AHRENKIEL, RK
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
AHRENKIEL, RK
KEYES, BM
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
KEYES, BM
SOLID-STATE ELECTRONICS,
1990,
33
(06)
: 693
-
704
[27]
RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT
BIREY, H
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523
BIREY, H
SITES, J
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523
SITES, J
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 619
-
634
[28]
LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE ON AN ETCHED SUBSTRATE
NORDQUIST, PER
论文数:
0
引用数:
0
h-index:
0
机构:
USN,NAVAL RES LAB,WASHINGTON,DC 20375
USN,NAVAL RES LAB,WASHINGTON,DC 20375
NORDQUIST, PER
LESSOFF, H
论文数:
0
引用数:
0
h-index:
0
机构:
USN,NAVAL RES LAB,WASHINGTON,DC 20375
USN,NAVAL RES LAB,WASHINGTON,DC 20375
LESSOFF, H
SWIGGARD, EM
论文数:
0
引用数:
0
h-index:
0
机构:
USN,NAVAL RES LAB,WASHINGTON,DC 20375
USN,NAVAL RES LAB,WASHINGTON,DC 20375
SWIGGARD, EM
MATERIALS RESEARCH BULLETIN,
1976,
11
(08)
: 939
-
945
[29]
FABRICATION TECHNOLOGY OF STABLE SCHOTTKY-BARRIER GATES FOR GALLIUM-ARSENIDE MESFETS
IDA, M
论文数:
0
引用数:
0
h-index:
0
IDA, M
UCHIDA, M
论文数:
0
引用数:
0
h-index:
0
UCHIDA, M
SHIMADA, K
论文数:
0
引用数:
0
h-index:
0
SHIMADA, K
ASAI, K
论文数:
0
引用数:
0
h-index:
0
ASAI, K
ISHIDA, S
论文数:
0
引用数:
0
h-index:
0
ISHIDA, S
SOLID-STATE ELECTRONICS,
1981,
24
(12)
: 1099
-
&
[30]
EFFECT OF CYCLIC HEAT-TREATMENT ON INTRINSIC ABSORPTION OF GALLIUM-ARSENIDE
METOLIDI, EN
论文数:
0
引用数:
0
h-index:
0
METOLIDI, EN
STARODUBOV, YD
论文数:
0
引用数:
0
h-index:
0
STARODUBOV, YD
KOVTUN, GP
论文数:
0
引用数:
0
h-index:
0
KOVTUN, GP
FIZIKA TVERDOGO TELA,
1993,
35
(02):
: 404
-
407
←
1
2
3
4
5
→