首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
HEAT-SINK SUBSTRATE MATERIAL CUTS THE COSTS OF GALLIUM-ARSENIDE FABRICATION
被引:0
|
作者
:
MALINIAK, D
论文数:
0
引用数:
0
h-index:
0
MALINIAK, D
机构
:
来源
:
ELECTRONIC DESIGN
|
1995年
/ 43卷
/ 06期
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:42 / 44
页数:3
相关论文
共 50 条
[1]
INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
PALIK, ED
论文数:
0
引用数:
0
h-index:
0
PALIK, ED
HOLM, RT
论文数:
0
引用数:
0
h-index:
0
HOLM, RT
GIBSON, JW
论文数:
0
引用数:
0
h-index:
0
GIBSON, JW
THIN SOLID FILMS,
1977,
47
(02)
: 167
-
175
[2]
Gallium-arsenide chip costs
Skinner, Richard D.
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuit Engineering Corp, Scottsdale, United States
Integrated Circuit Engineering Corp, Scottsdale, United States
Skinner, Richard D.
Applied Microwave Magazine,
1993,
5
(01):
[3]
GALLIUM-ARSENIDE FABRICATION FACILITIES
不详
论文数:
0
引用数:
0
h-index:
0
不详
MICROWAVE JOURNAL,
1985,
28
(09)
: 48
-
&
[4]
GALLIUM-ARSENIDE AS A MECHANICAL MATERIAL
HJORT, K
论文数:
0
引用数:
0
h-index:
0
机构:
Inst. of Technol., Uppsala Univ.
HJORT, K
SODERKVIST, J
论文数:
0
引用数:
0
h-index:
0
机构:
Inst. of Technol., Uppsala Univ.
SODERKVIST, J
SCHWEITZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Inst. of Technol., Uppsala Univ.
SCHWEITZ, JA
JOURNAL OF MICROMECHANICS AND MICROENGINEERING,
1994,
4
(01)
: 1
-
13
[5]
REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL
STIRLAND, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD, ALLEN CLARK RES CTR, TOWCESTER, NORTHAMPTONSHIR, ENGLAND
STIRLAND, DJ
STRAUGHAN, BW
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD, ALLEN CLARK RES CTR, TOWCESTER, NORTHAMPTONSHIR, ENGLAND
STRAUGHAN, BW
THIN SOLID FILMS,
1976,
31
(1-2)
: 139
-
170
[6]
GALLIUM-ARSENIDE - A SEMICONDUCTOR MATERIAL WITH A FUTURE
WALDMEIER, M
论文数:
0
引用数:
0
h-index:
0
WALDMEIER, M
UMSCHAU,
1985,
85
(01):
: 46
-
48
[7]
HEAT-CAPACITY OF GALLIUM-ARSENIDE
DASH, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
PERKIN ELMER CORP,BEACONSFIELD,BUCKINGHAMSHIRE,ENGLAND
DASH, AJ
FINCH, A
论文数:
0
引用数:
0
h-index:
0
机构:
PERKIN ELMER CORP,BEACONSFIELD,BUCKINGHAMSHIRE,ENGLAND
FINCH, A
GARDNER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PERKIN ELMER CORP,BEACONSFIELD,BUCKINGHAMSHIRE,ENGLAND
GARDNER, PJ
COTTRELL, M
论文数:
0
引用数:
0
h-index:
0
机构:
PERKIN ELMER CORP,BEACONSFIELD,BUCKINGHAMSHIRE,ENGLAND
COTTRELL, M
JOURNAL OF CHEMICAL AND ENGINEERING DATA,
1974,
19
(02):
: 113
-
114
[8]
FABRICATION PROCESSES FOR A SILICON SUBSTRATE PACKAGE FOR INTEGRATED GALLIUM-ARSENIDE LASER ARRAYS
BRADY, MJ
论文数:
0
引用数:
0
h-index:
0
BRADY, MJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(10)
: 1642
-
1647
[9]
GALLIUM-ARSENIDE EPITAXY IN SILICON SUBSTRATE WINDOWS
OSINSKII, VI
论文数:
0
引用数:
0
h-index:
0
OSINSKII, VI
KATSAPOV, FM
论文数:
0
引用数:
0
h-index:
0
KATSAPOV, FM
DOKLADY AKADEMII NAUK BELARUSI,
1978,
22
(02):
: 123
-
126
[10]
GALLIUM-ARSENIDE - THE MATERIAL FOR FAST ELECTRONICS AND OPTOELECTRONICS
BOTHA, AP
论文数:
0
引用数:
0
h-index:
0
BOTHA, AP
SOUTH AFRICAN JOURNAL OF SCIENCE,
1987,
83
(03)
: 133
-
137
←
1
2
3
4
5
→