PLASMA-ENHANCED DIAMOND NUCLEATION ON SI

被引：29
|
作者：
KATOH, M
AOKI, M
KAWARADA, H
机构：
[1] Department of Electronics and Communication Engineering, Waseda University, Ohkubo, Shinjuku-ku, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 2A期
关键词：
DIAMOND; NUCLEATION; SILICON; PLASMA; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH;
D O I：
10.1143/JJAP.33.L194
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Both positive and negative bias effects on the nucleation of chemical vapor deposition (CVD) diamond have been investigated thoroughly in microwave plasma. Prior to the conventional microwave plasma CVD growth of diamond, positive or negative biasing pretreatment has been performed. The pretreatment conditions were varied in terms of substrate bias voltage (-100 similar to + 100 V), pretreatment pressure (0.2 similar to 15 Torr), and methane fraction (2 similar to 40%) in hydrogen source gas. It is found that the positive substrate bias as well as the negative bias are effective for the nucleation of diamond.
引用
收藏
页码：L194 / L196
页数：3
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