ELECTRON-STATES IN DOUBLE-CHANNEL BACK-GATED HEMT STRUCTURES

被引：6

作者：

OWEN, PM ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of self-consistent calculations for the electronic subband structure of double-channel back-gated HEMT structures. This structure is a promising candidate for a velocity modulated transistor in which electrons are switched between high- and low-mobility 2DEGS by applying biases to front and back gates. The calculations identify the important physics for this structure, which uses alloy and ionized impurity scattering to selectively lower the mobility of one ot the 2DEGS. We discuss design optimization for this device.

引用

页码：123 / 126

页数：4

共 6 条

[1] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].