MICROWAVE NOISE CHARACTERIZATION OF POLYEMITTER BIPOLAR JUNCTION TRANSISTORS

被引：13

作者：

DEEN, MJ ^{[1
]}

ILOWSKI, JJ ^{[1
]}

机构：

[1] NO TELECOM CANADA LTD,DEPT P813,NEPEAN K2H 8V4,ON,CANADA

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave noise characteristics of poly-emitter bipolar junction transistors have been evaluated in a 0.8 mum silicon BiCMOS process, at frequencies between 1 and 5.6 GHz, and for collector currents between 0.5 and 15 mA. Using a small-signal model for the poly-emitter bipolar junction transistors, very good agreement has been obtained between measurements and calculations of both noise figure (F(MIN)) against frequency, and F(MIN) against collector current. It is found that F(MIN) was 2.3 dB at 1 GHz and 8.3 dB at 5.6 GHz for a collector current of 5 mA.

引用

页码：676 / 677

页数：2