Lateral Deformation of a Silicon Crystal Surface Structure Induced by Low-Fluence Ion-Beam Irradiation

被引：2

作者：

Guo, Xiaowei ^{[1
]}

Momota, Sadao ^{[2
]}

Nitta, Noriko ^{[3
]}

Maeda, Kazuki ^{[1
]}

机构：

[1] Kochi Univ Technol, Dept Intelligent Mech Engn, Kami City, Kochi 7828502, Japan

[2] Kochi Univ Technol, Sch Environm Sci & Engn, Kami City, Kochi 7828502, Japan

[3] Kochi Univ Technol, Res Inst, Ctr Nanotechnol, Kami City, Kochi 7828502, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2015年 / 13卷

关键词：

Ion implantation; Order-disorder phase transition; Radiation damage; Nano structure processing; Silicon; Lateral deformation;

D O I：

10.1380/ejssnt.2015.35

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The increasing importance of the volume expansion effect on crystalline materials induced by ion-beam irradiation has drawn much attention because of its applications. For example, the expansion effect is used as a good probe to investigate any crystalline-amorphous (c-a) phase change and/or damage. Because the expansion rate and its depth profile can be controlled by means of the irradiation parameters, such as fluence and energy, the deformation of structures on the micro-/nano-meter scale is expected. The fluence needed to achieve deformation is relatively low, and it is expected that irradiation-induced damage is reduced compared with that induced by conventional ion-beam fabrication. Therefore, this expansion effect is a potential method to improve the ion-beam technology employed to fabricate complicated 3-dimensional structures requested in actively developing industrial fields, such as MEMS/NEMS.

引用

页码：35 / 41

页数：7

共 21 条

[1] A COMPARATIVE-STUDY OF SWELLING, STRAIN AND RADIATION-DAMAGE OF HIGH-ENERGY PROTON-BOMBARDED GAAS, GAP, INP, SI AND GE SINGLE-CRYSTALS [J].

ASCHERON, C ;

SCHINDLER, A ;

FLAGMEYER, R ;

OTTO, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 36 (02) :163-172

[2] Swift heavy ion-induced swelling and damage in yttria-stabilized zirconia [J].

Costantini, Jean-Marc ;

Trautmann, Christina ;

Thome, Lionel ;

Jagielski, Jacek ;

Beuneu, Francois .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[3] DENSITY OF AMORPHOUS SI [J].

CUSTER, JS ;

THOMPSON, MO ;

JACOBSON, DC ;

POATE, JM ;

ROORDA, S ;

SINKE, WC ;

SPAEPEN, F .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :437-439

[4] Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells [J].

Droz, C ;

Vallat-Sauvain, E ;

Bailat, J ;

Feitknecht, L ;

Meier, J ;

Shah, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 81 (01) :61-71

[5] Unidirectional expansion of lattice parameters in GaN induced by ion implantation [J].

Fa Tao ;

Li Lin ;

Yao Shu-De ;

Wu Ming-Fang ;

Zhou Sheng-Qiang .

CHINESE PHYSICS B, 2011, 20 (05)

[6] SECONDARY ION MASS-SPECTROMETRY GENERATES SWELLING OF GASB - DEPTH RESOLUTION AND SECONDARY ION YIELDS [J].

GAUNEAU, M ;

CHAPLAIN, R ;

RUPERT, A ;

TOUDIC, Y ;

CALLEC, R ;

ANDRE, E .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2051-2056

[7]

Giri P. K, 2001, PHYS REV B, V65, DOI DOI 10.1103/PHYSREVB.65.012110

[8] Swelling effects in Y2Ti2O7 pyrochlore irradiated with 400 keV Ne2+ ions [J].

Li, Y. H. ;

Wang, Y. Q. ;

Valdez, J. A. ;

Tang, M. ;

Sickafus, K. E. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 274 :182-187

[9] First operation of ECR ion source at Kochi University of Technology [J].

Momota, S ;

Nojiri, Y ;

Saihara, M ;

Sakamoto, A ;

Hamagawa, H ;

Hamaguchi, K .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (05) :1497-1498

[10] Control of Swelling Height of Si Crystal by Irradiating Ar Beam [J].

Momota, Sadao ;

Zhang, Jianguo ;

Toyonaga, Takuya ;

Terauchi, Hikaru ;

Maeda, Kazuki ;

Taniguchi, Jun ;

Hirao, Takashi ;

Furuta, Mamoru ;

Kawaharamura, Toshiyuki .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (01) :552-556

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