DESIGN AND ANALYSIS OF SILICON BIPOLAR-TRANSISTORS FOR LOW-TEMPERATURE OPERATION

被引：2

作者：

ZHENG, J

WU, J

WEI, TL

机构：

[1] Microelectronics Center, Southeast University, Nanjing

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 11期

关键词：

D O I：

10.1016/0038-1101(92)90199-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Most conventional bipolar transistors designed for room temperature operation suffer serious performance degradation at liquid-nitrogen temperature (LNT). In this paper, the silicon bipolar transistors with poly and amorphous emitters for low temperature operation are presented. The transistors obtained show good electrical properties at 77 K.

引用

页码：1697 / 1703

页数：7

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