HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES

被引：58
作者：
HERZOG, AH
KEUNE, DL
CRAFORD, MG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期
关键词：
D O I：
10.1063/1.1661164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：600 / &
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共 25 条
[1]   DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
TIETJEN, JJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :760-&
[2]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[3]  
ARCHER RJ, 1967, 1966 P GAAS S READ, P103
[4]  
Bergh A. A., 1969, Ohmic contacts to semiconductors, P115
[5]   ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE [J].
CARR, WN ;
PITTMAN, GE .
APPLIED PHYSICS LETTERS, 1963, 3 (10) :173-175
[6]  
CARR WN, 1965, IEEE T ELECTRON DEVI, VED12, P53
[7]   GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS [J].
CRAFORD, MG ;
GROVES, WO ;
FOX, MJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :355-+
[8]   OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J].
DUMKE, WP .
PHYSICAL REVIEW, 1963, 132 (05) :1998-&
[9]  
EDWARDS JW, 1962, SEMICOND PROD, V5, P31
[10]   HIGHLY REFRACTIVE GLASSES TO IMPROVE ELECTROLUMINESCENT DIODE EFFICIENCIES [J].
FISCHER, AG ;
NUESE, CJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1718-&
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