ELECTRONIC-PROPERTIES AND BAND SCHEMES IN AMORPHOUS-SEMICONDUCTORS .2. ELECTRONIC TRANSPORT

We present the particular study of three important electric parameters which characterize an amorphous semiconductor. The band scheme is the Mott - Davis model and the three parameters: dark conductivity, thermoelectric power and alternative conductivity are determined versus temperature : calculations are presented on the more general manner for the successive energy levels (extended states, localized states in band tails, localized states near Fermi level). The schematic representations are finally proposed: at the classical curves obtained for the conductivities, we add a peculiar scheme for the thermoelectric power: its study is of importance for determining (with its sign) the type of amorphous semiconductor.