SELF-LIMITING GROWTH IN ATOMIC LAYER EPITAXY OF ZNTE

被引：12

作者：

TAKEMURA, Y

NAKANISHI, H

KONAGAI, M

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

ZNTE; ALE; MBE; SELF-LIMITING;

D O I：

10.1143/JJAP.30.L246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250-degrees-C and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.

引用

页码：L246 / L248

页数：3

共 50 条

[1] Self-limiting growth in atomic layer epitaxy of ZnTe
Takemura, Yasushi, 1600, (30):
[2] SELF-LIMITING GROWTH WITH 0.5 MONOLAYER PER CYCLE IN ATOMIC LAYER EPITAXY OF ZNTE
TAKEMURA, Y
KONAGAI, M
NAKANISHI, H
TAKAHASHI, K
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 144 - 147
[3] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS
TISCHLER, MA
BEDAIR, SM
APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683
[4] ATOMIC LAYER EPITAXY OF GAP AND ELUCIDATION FOR SELF-LIMITING MECHANISM
SAKUMA, Y
KODAMA, K
OZEKI, M
APPLIED PHYSICS LETTERS, 1990, 56 (09) : 827 - 829
[5] Growth temperature window and self-limiting process in sub-atomic-layer epitaxy
Ishida, M
Yamashita, M
Nagata, Y
Suda, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 4011 - 4015
[6] DIGITAL ATOMIC LAYER EPITAXY OF III-V-COMPOUNDS WITH SELF-LIMITING GROWTH-MECHANISM
USUI, A
WATANABE, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C484 - C484
[7] THE MECHANISM OF SELF-LIMITING GROWTH OF ATOMIC LAYER EPITAXY OF GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLGALLIUM AND ARSINE
WATANABE, A
ISU, T
HATA, M
KAMIJOH, T
KATAYAMA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07): : L1080 - L1082
[8] ATOMIC LAYER EPITAXY OF GAAS AND ROLE OF AS-SOURCE MATERIALS ON SELF-LIMITING MECHANISM
FUJII, K
SUEMUNE, I
KOUI, T
YAMANISHI, M
APPLIED PHYSICS LETTERS, 1992, 60 (12) : 1498 - 1500
[9] Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
Nishizawa, J
Kurabayashi, T
Plotka, P
Kikuchi, H
Hamano, T
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 429 - 431
[10] Breakdown of self-limiting behaviour in InAs/GaAs heterostructures grown by atomic layer epitaxy
Ares, R
Watkins, SP
Tran, CA
JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 574 - 578

← 1 2 3 4 5 →