OBSERVATIONS OF BARRIER RECOMBINATION IN GAAS-ALGAAS QUANTUM WELL STRUCTURES

被引：10

作者：

BLOOD, P ^{[1
]}

TSUI, ESM ^{[1
]}

FLETCHER, ED ^{[1
]}

机构：

[1] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2218 / 2220

页数：3

共 10 条

[1] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

COLAK, S ;

KUCHARSKA, AI .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :599-601

[2] INFLUENCE OF BROADENING AND HIGH-INJECTION EFFECTS ON GAAS-ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

COLAK, S ;

KUCHARSKA, AI .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1593-1604

[3] DEPENDENCE OF THRESHOLD CURRENT ON THE NUMBER OF WELLS IN ALGAAS-GAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

FLETCHER, ED ;

WOODBRIDGE, K .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :193-195

[4]

Blood P., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V861, P34, DOI 10.1117/12.943405

[5]

BLOOD P, 1989, IEEE J QUANTUM ELECT, V25

[6]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P193

[7] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS [J].

CHINN, SR ;

ZORY, PS ;

REISINGER, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) :2191-2214

[8]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[9] EFFECTS OF ELECTRONIC COUPLING ON THE BAND ALIGNMENT OF THIN GAAS/ALAS QUANTUM-WELL STRUCTURES [J].

MOORE, KJ ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1988, 38 (05) :3368-3374

[10] THRESHOLD CURRENT OF SINGLE QUANTUM-WELL LASERS - THE ROLE OF THE CONFINING LAYERS [J].

NAGLE, J ;

HERSEE, S ;

KRAKOWSKI, M ;

WEIL, T ;

WEISBUCH, C .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1325-1327

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