A QUALITATIVE COMPARISON BETWEEN 2 SEMICONDUCTOR-LASER AMPLIFIER EQUIVALENT-CIRCUIT MODELS

被引：6
|
作者：
LOWERY, AJ [1 ]
机构：
[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 08期
关键词：
D O I：
10.1109/3.59684
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two different forms of equivalent circuit models have been independently proposed for semiconductor laser amplifiers. These have interesting similarities in their equivalent circuits. This paper will compare the models in terms of derivation, completeness, applications, and computing speed. Results from the transmission line laser model -(TLLM) are presented and show the effects of input power, carrier inhomogeneities, and front facet reflectivity on two-input intermodulation distortion. © 1990 IEEE
引用
收藏
页码：1369 / 1375
页数：7
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