SHAPES OF 2-PHONON RECOMBINATION PEAKS IN SILICON

被引：31

作者：

FOLLAND, NO

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 1卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.1.1648

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1648 / &

共 18 条

[1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J].

AUBREY, JE ;

GUBLER, W ;

HENNINGSEN, T ;

KOENIG, SH .

PHYSICAL REVIEW, 1963, 130 (05) :1667-+

[2] Theory of Brilloum zones and symmetry properties of wave functions in crystals [J].

Bouckaert, LP ;

Smoluchowski, R ;

Wigner, E .

PHYSICAL REVIEW, 1936, 50 (01) :58-67

[3] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J].

BROCKHOUSE, BN .

PHYSICAL REVIEW LETTERS, 1959, 2 (06) :256-258

[4] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[5]

DOLLING G, 1965, INELASTIC SCATTERING, P249

[6] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J].

DRESSELHAUS, G .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :14-22

[7] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].

DRESSELHAUS, G ;

DRESSELHAUS, MS .

PHYSICAL REVIEW, 1967, 160 (03) :649-+

[8] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI [J].

DUMKE, WP .

PHYSICAL REVIEW, 1960, 118 (04) :938-939

[9] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[10] ELECTRON-PHONON MATRIX ELEMENTS IN N-TYPE SILICON [J].

FOLLAND, NO .

PHYSICS LETTERS A, 1968, A 27 (10) :708-&

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