A 2-TEMPERATURE TECHNIQUE FOR PECVD DEPOSITION OF SILICON DIOXIDE

被引：10

作者：

HERMAN, JS

TERRY, FL

机构：

[1] Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期

关键词：

D O I：

10.1109/55.79568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique has been developed and analyzed for plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide films which yields lower interface trap densities. First, a thin cap layer is deposited at a low temperature and the film is subjected to an in-situ hydrogen plasma treatment. Then the temperature is raised to the final value and the deposition continued to the desired thickness.

引用

页码：236 / 237

页数：2

共 5 条

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