HETEROEPITAXY OF INSB ON SILICON BY METALORGANIC MAGNETRON SPUTTERING

被引：35

作者：

RAO, TS ^{[1
]}

WEBB, JB ^{[1
]}

HOUGHTON, DC ^{[1
]}

BARIBEAU, JM ^{[1
]}

MOORE, WT ^{[1
]}

NOAD, JP ^{[1
]}

机构：

[1] COMMUN RES CTR,ADV DEVICES & RELIABIL DIRECTORATE,OTTAWA K2H 8S2,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.100123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：51 / 53

页数：3

共 11 条

[1]

CHANG PK, 1985, APPL PHYS LETT, V46, P383

[2]

FAN JCC, 1987, HETEROEPITAXY SILICO, V2

[3] THE GROWTH OF GALLIUM-ARSENIDE ON SI(100) BY MOLECULAR-BEAM EPITAXY [J].

MOORE, WT ;

DEVINE, RLS ;

MAIGNE, P ;

HOUGHTON, DC ;

BARIBEAU, JM ;

DENHOFF, MW ;

JACKMAN, TE ;

KORNELSEN, EV ;

SPRINGTHORPE, AJ ;

MANDEVILLE, P .

CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :904-908

[4] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX [J].

NOREIKA, AJ ;

GREGGI, J ;

TAKEI, WJ ;

FRANCOMBE, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :558-561

[5]

ORIAS G, 1986, SPIE J, V627, P408

[6]

RAO TS, 1987, IN PRESS THIN SOLID

[7]

ROUAN D, 1985, SPIE J, V590, P348

[8]

Webb J. B., 1987, Chemtronics, V2, P3

[9] DEPOSITION OF INDIUM-ANTIMONIDE FILMS BY METALORGANIC MAGNETRON SPUTTERING [J].

WEBB, JB ;

HALPIN, C .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :831-833

[10] THE STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF INSB FILMS PREPARED BY METALORGANIC MAGNETRON SPUTTERING [J].

WEBB, JB ;

HALPIN, C ;

NOAD, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2949-2953

← 1 2 →