THE ROLE OF REFLECTIVITY CHANGE IN OPTICALLY INDUCED RECRYSTALLIZATION OF THIN SILICON FILMS

被引:26
作者
GRIGOROPOULOS, CP [1 ]
BUCKHOLZ, RH [1 ]
DOMOTO, GA [1 ]
机构
[1] XEROX PALO ALTO RES CTR,MECH ENGN SCI,N TARRYTOWN,NY 10591
关键词
HEAT SINKS - LASER BEAMS - Effects - LIGHT - Reflection - SEMICONDUCTING FILMS - Radiation Effects - SILICON AND ALLOYS - Recrystallization;
D O I
10.1063/1.336652
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we study a simplified model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heat-sink structure. It has been observed that instabilities in laser induced crystal growth on thin polysilicon layers do occur. To study these solidification instabilities we use a linear stability analysis. The reflectivity difference between the liquid and the solid phases is shown to be a source of thermal instability.
引用
收藏
页码:454 / 458
页数:5
相关论文
共 16 条
[1]  
Biegelsen D.K., 1983, MAT RES SOC S P, V13, P537
[2]  
BLAKELY JM, 1973, INTRO PROPERTIES CRY, P116
[3]  
BOSCH MA, 1981, PHYS REV LETT, V47, P115
[4]  
HAWKINS WG, 1982, APPL PHYS LETT, V42, P388
[5]   INSTABILITY IN RADIATIVELY MELTED SILICON FILMS [J].
JACKSON, KA ;
KURTZE, DA .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) :385-390
[6]   TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J].
LAMPERT, MO ;
KOEBEL, JM ;
SIFFERT, P .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :4975-4976
[7]   MICROSCOPY OF SI FILMS DURING LASER MELTING [J].
LEMONS, RA ;
BOSCH, MA .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :703-706
[8]  
MEYER JR, 1980, J APPL PHYS, V51, P5520
[9]   STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY [J].
MULLINS, WW ;
SEKERKA, RF .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :444-&
[10]   ALIGNED, COEXISTING LIQUID AND SOLID REGIONS IN LASER-ANNEALED SI [J].
NEMANICH, RJ ;
BIEGELSEN, DK ;
HAWKINS, WG .
PHYSICAL REVIEW B, 1983, 27 (12) :7817-7819