DISCUSSION ABOUT ELECTRICAL-RESISTIVITY IN NB-DOPED BATIO3 SINGLE-CRYSTAL AND CERAMIC

被引:0
|
作者
GILLOT, C
MICHENAUD, JP
机构
来源
SILICATES INDUSTRIELS | 1994年 / 59卷 / 5-6期
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The temperature dependence of the DC electrical resistivity in a 0.2 at% Nb-doped BaTiO3 ceramic and of the corresponding single crystal has been measured from 60K to 420K. In both materials, resistivity discontinuities are observed at each phase transition. In the cubic phase, the PTC effect is only present in the ceramic, but in the rhomboedral phase, as the temperature decreases, a sharp increase of the resistivity, with the same activation energy, is clearly observed in the ceramic as well as in the single crystal. This suggests a common conductivity mechanism governed by bulk properties. Moreover, it appears that a polaronic type of conduction is relevant in the whole range of temperature, for the single crystal, even in the cubic phase. This conclusion is at variance with the usual assumption that the bulk conductivity behaves as that of an usual n-type semiconductor.
引用
收藏
页码:177 / 179
页数:3
相关论文
共 50 条
  • [1] DC ELECTRICAL-RESISTIVITY OF NB-DOPED BATIO3 AND EPR MEASUREMENTS
    GILLOT, C
    MICHENAUD, JP
    MAGLIONE, M
    JANNOT, B
    SOLID STATE COMMUNICATIONS, 1992, 84 (11) : 1033 - 1038
  • [2] Electrical properties of Nb-doped BaTiO3
    Kowalski, K
    Ijjaali, M
    Bak, T
    Dupre, B
    Nowotny, J
    Rekas, M
    Sorrell, CC
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (03) : 543 - 551
  • [3] Synthesis and electrical properties of Nb-doped BaTiO3
    Maso, N.
    Beltran, H.
    Cordoncillo, E.
    Flores, A. Arenas
    Escribano, P.
    Sinclair, D. C.
    West, A. R.
    JOURNAL OF MATERIALS CHEMISTRY, 2006, 16 (30) : 3114 - 3119
  • [4] ABOUT THE INTERPRETATION OF THE PTC EFFECT IN NB-DOPED BATIO3 CERAMICS
    MICHENAUD, JP
    GILLOT, C
    FERROELECTRICS, 1992, 127 (1-4) : 41 - 46
  • [5] ELECTRICAL-RESISTIVITY IN GADOLINIUM SINGLE-CRYSTAL
    MAEZAWA, K
    MORI, K
    SATO, K
    SAITO, Y
    WAKABAYASHI, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1815 - 1816
  • [6] THE ELECTRICAL-RESISTIVITY OF CEPTSI SINGLE-CRYSTAL
    SERA, M
    SATOH, T
    KASUYA, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1988, 57 (02) : 671 - 672
  • [7] Effect of Nb content on the structure and electrical properties of Nb-doped BaTiO3 ceramics
    Mitic, VM
    Zivkovic, LM
    Paunovic, VV
    Jordovic, B
    CERAMIC MATERIALS AND MULTILAYER ELECTRONIC DEVICES, 2003, 150 : 197 - 204
  • [8] Electrical properties and crystal structures of semiconductive Nb-doped BaTiO3 thin film prepared by MOCVD
    Nagano, D
    Funakubo, H
    Sakurai, O
    Saiki, A
    Shinozaki, K
    Mizutani, N
    ELECTROCERAMICS IN JAPAN I, 1999, 157-1 : 167 - 173
  • [9] Grain growth control in nb-doped BaTiO3
    Brzozowski, E
    Castro, MS
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2005, 168 (03) : 464 - 470
  • [10] Polymorphism and dielectric properties of nb-doped BaTiO3
    Maso, Nahum
    Beltran, Hector
    Cordoncillo, Eloisa
    Sinclair, Derek C.
    West, Anthony R.
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (01) : 144 - 150