DIVERSITY AND FEASIBILITY OF DIRECT BONDING - A SURVEY OF A DEDICATED OPTICAL-TECHNOLOGY

被引:85
作者
HAISMA, J
SPIERINGS, BACM
BIERMANN, UKP
VANGORKUM, AA
机构
[1] Philips Research Laboratories, Eindhoven, P.O. Box 80000
来源
APPLIED OPTICS | 1994年 / 33卷 / 07期
关键词
DIRECT BONDING; REFRACTORY METALS; SEMIMETAL; BORON; DIAMOND; CARBIDE; FLUORIDE; NITRIDE; OXIDE; CHALCOGENIDE; WAVE-GUIDES; FIBER PLATES; SURFACE STATE; INTERFACE ENGINEERING;
D O I
10.1364/AO.33.001154
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The aim of this paper is to review almost a decade of direct-bonding activities at Philips Research including the diversity and feasibility of direct bonding. The bondability of a material is determined by its geometrical shape and mechanical, physical, and chemical surface states. Physically direct bonding provides a vacuumtight bond, which is jointless and glueless, and it permits engineering of the interfaces to be bonded. Layers can be buried, and reflective-lossless bonds between optical elements can be created. A variety of materials are investigated: (refractory) metals, a semimetal, boron, diamond, a carbide, fluorides, nitrides, oxides, and a chalcogenide. The applications that we describe relate to interface engineering, waveguiding, and the direct bonding of a fiber plate.
引用
收藏
页码:1154 / 1169
页数:16
相关论文
共 40 条
[1]   SILICON-WAFER BONDING MECHANISM FOR SILICON-ON-INSULATOR STRUCTURES [J].
ABE, T ;
TAKEI, T ;
UCHIYAMA, A ;
YOSHIZAWA, K ;
NAKAZATO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2311-L2314
[2]  
ABE T, 1992, 1ST P INT S SEM WAF, P311
[3]  
BIERMANN UKP, 1991, Patent No. 4994139
[4]   ALIGNED WAFER BONDING - A KEY TO 3-DIMENSIONAL MICROSTRUCTURES [J].
BOWER, RW ;
ISMAIL, MS ;
FARRENS, SN .
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (05) :383-387
[5]  
BUDDE KJ, 1992, 1ST P INT S SEM WAF, P271
[6]  
CHA G, 1992, 1ST P INT S SEM WAF, P249
[7]  
CHERNOBEREZHSKI.Y, 1986, COLLOID J RUSS ACAD+, V45, P516
[8]  
CRISTEL L, 1990, SENSOR ACTUAT A-PHYS, V21, P84
[9]  
ENGSTROM O, 1992, 1ST P INT S SEM WAF, P295
[10]   DEFECT STRUCTURES IN LASER-FUSED SI-SIO2 WAFERS [J].
GEYSELAERS, ML ;
HAISMA, J ;
WIDDERSHOVEN, FP ;
MICHIELSEN, TM ;
READER, AH .
APPLIED PHYSICS LETTERS, 1989, 54 (14) :1311-1313