PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS

被引：25
|
作者：
INOUE, S
TOYOKURA, N
NAKAMURA, T
ISHIKAWA, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 11期
关键词：
D O I：
10.1149/1.2127259
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2402 / 2410
页数：9
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