PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS

被引：25

作者：

INOUE, S

TOYOKURA, N

NAKAMURA, T

ISHIKAWA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 11期

关键词：

D O I：

10.1149/1.2127259

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2402 / 2410

页数：9

共 21 条

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[2]

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