ULTRAHIGH-VACUUM MICROSCOPY OF THE SI(111) BORON ROOT-3X-ROOT-3R30 DEGREES SURFACE

被引：1
|
作者：
MARKS, LD
AI, R
SAVAGE, S
ZHANG, JP
机构：
[1] Center for Surface Radiation Damage Studies, Department of Materials Science and Engineering, Northwestern University, Evanston
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期
关键词：
D O I：
10.1116/1.578758
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The intensities of the diffraction spots for the boron induced square-root 3 X square-root 3R30-degrees Si(111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7 X 7 surface.
引用
收藏
页码：469 / 473
页数：5
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