ULTRAHIGH-VACUUM MICROSCOPY OF THE SI(111) BORON ROOT-3X-ROOT-3R30 DEGREES SURFACE

被引:1
|
作者
MARKS, LD
AI, R
SAVAGE, S
ZHANG, JP
机构
[1] Center for Surface Radiation Damage Studies, Department of Materials Science and Engineering, Northwestern University, Evanston
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期
关键词
D O I
10.1116/1.578758
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The intensities of the diffraction spots for the boron induced square-root 3 X square-root 3R30-degrees Si(111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7 X 7 surface.
引用
收藏
页码:469 / 473
页数:5
相关论文
共 50 条
  • [21] ATOMIC-STRUCTURE OF SI(111)(ROOT-3 X ROOT-3) R30-DEGREES-AU
    QUINN, J
    JONA, F
    MARCUS, PM
    PHYSICAL REVIEW B, 1992, 46 (11): : 7288 - 7291
  • [22] Adsorption of C-60 on Si(111)root 3x root 3R(30 degrees)-Ag
    LeLay, G
    Gothelid, M
    Aristov, VY
    Cricenti, A
    Hakansson, MC
    Giammichele, C
    Perfetti, P
    Avila, J
    Asensio, MC
    SURFACE SCIENCE, 1997, 377 (1-3) : 1061 - 1065
  • [23] STRUCTURE OF (SQUARE-ROOT-3 X SQUARE-ROOT-3) R30-DEGREES AG ON SI(111)
    BULLOCK, EL
    HERMAN, GS
    YAMADA, M
    FRIEDMAN, DJ
    FADLEY, CS
    PHYSICAL REVIEW B, 1990, 41 (03): : 1703 - 1706
  • [24] ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE
    GREHK, TM
    JOHANSSON, LSO
    KARLSSON, UO
    FLODSTROM, AS
    PHYSICAL REVIEW B, 1993, 47 (20): : 13887 - 13890
  • [25] Investigation of the Si(111) ( root3× root3)R30°-boron surface reconstruction by simulated annealing
    Wong, Yat-Ting
    Schubert, Boris
    Hoffmann, Roald
    Journal of the American Chemical Society, 1992, 114 (07):
  • [26] STRUCTURE-ANALYSIS OF THE SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3R30-DEGREES-AG SURFACE
    KATAYAMA, M
    WILLIAMS, RS
    KATO, M
    NOMURA, E
    AONO, M
    PHYSICAL REVIEW LETTERS, 1991, 66 (21) : 2762 - 2765
  • [27] OBSERVATION AND STRUCTURAL DETERMINATION OF (SQUARE-ROOT-3 X SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTION OF THE SI(111) SURFACE
    FAN, WC
    IGNATIEV, A
    HUANG, H
    TONG, SY
    PHYSICAL REVIEW LETTERS, 1989, 62 (13) : 1516 - 1519
  • [28] AN X-RAY-DIFFRACTION STUDY OF THE SI(111)(ROOT-3X-ROOT-3)R30-DEGREES INDIUM RECONSTRUCTION
    FINNEY, MS
    NORRIS, C
    HOWES, PB
    VANSILFHOUT, RG
    CLARK, GF
    THORNTON, JMC
    SURFACE SCIENCE, 1993, 291 (1-2) : 99 - 109
  • [29] Oxidation of silver-passivated Si(111): Ag-(root 3x root 3)R30 degrees
    Schmitsdorf, RF
    Monch, W
    SURFACE SCIENCE, 1996, 352 : 322 - 326
  • [30] EARLY STAGES OF CU GROWTH ON B-SI(111)ROOT-3 X ROOT-3R30-DEGREES
    MATHIEZ, P
    ROGE, TP
    DUMAS, P
    SALVAN, F
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 551 - 557