PLASMA ENHANCED CVD OF TUNGSTEN - SOME KINETIC RESULTS

被引：10

作者：

WOOD, J

机构：

来源：

关键词：

D O I：

10.1016/0169-4332(89)90559-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：397 / 406

页数：10

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[5]

Hess D. W., 1986, Tungsten and Other Refractory Metals for VLSI Applications. Proceedings of the 1985 and 1984 Workshops, P105

HODSON, CMT ;

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[8]

McConica C., 1986, Tungsten and Other Refractory Metals for VLSI Applications. Proceedings of the 1985 and 1984 Workshops, P433

[9]

PARK HL, 1988, THIN SOLID FILMS, V166, P37, DOI 10.1016/0040-6090(88)90364-1

[10] KINETICS AND MECHANISM OF SELECTIVE TUNGSTEN DEPOSITION BY LPCVD [J].

PAULEAU, Y ;

LAMI, P .