SIMPLE EXPRESSIONS FOR THE LINEWIDTH ENHANCEMENT FACTOR IN DIRECT-GAP SEMICONDUCTORS

被引:42
作者
WESTBROOK, LD
ADAMS, MJ
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1987年 / 134卷 / 04期
关键词
D O I
10.1049/ip-j.1987.0037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:209 / 214
页数:6
相关论文
共 17 条
[1]   A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS [J].
ADAMS, MJ ;
WESTLAKE, HJ ;
OMAHONY, MJ ;
HENNING, ID .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1498-1504
[2]  
ADAMS MJ, 1969, GAAS LASERS
[3]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[4]  
Asada M., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE68, P518
[5]  
DRUDE P, 1902, LEHRBUCH OPTIK
[6]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[7]   ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].
JOYCE, WB ;
DIXON, RW .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356
[8]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[9]   OBSERVATIONS OF SELF-FOCUSING IN STRIPE GEOMETRY SEMICONDUCTOR-LASERS AND DEVELOPMENT OF A COMPREHENSIVE MODEL OF THEIR OPERATION [J].
KIRKBY, PA ;
GOODWIN, AR ;
THOMPSON, GHB ;
SELWAY, PR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :705-719
[10]   NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].
KOCH, TL ;
BOWERS, JE .
ELECTRONICS LETTERS, 1984, 20 (25-2) :1038-1040