SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI/SIGE HETEROSTRUCTURES

被引：48

作者：

EMELEUS, CJ ^{[1
]}

WHALL, TE ^{[1
]}

SMITH, DW ^{[1
]}

KUBIAK, RA ^{[1
]}

PARKER, EHC ^{[1
]}

KEARNEY, MJ ^{[1
]}

机构：

[1] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2-5 X 10(11) CM-2 and a typical mobility at 5 K of 2000 cm2 V-1 s-1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.

引用

页码：3852 / 3856

页数：5

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