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- [4] SINGULARITY OF THE PHOTOCONDUCTIVITY SPECTRUM OF TELLURIUM-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1192 - 1192
- [7] CHARACTERISTICS OF THE ELECTRON TRAPS PRODUCED BY ELECTRON-IRRADIATION IN N-TYPE GERMANIUM PHYSICAL REVIEW B, 1982, 26 (12): : 6788 - 6794
- [9] NEUTRON RADIATION DEFECTS IN BISMUTH AND TELLURIUM-DOPED BISMUTH PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 729 - 734
- [10] NEGATIVE SHIFT OF THE IMPURITY PHOTOCONDUCTIVITY EDGE OF TELLURIUM-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 209 - 211