REACTIVE ION ETCH PROCESS WITH HIGHLY CONTROLLABLE GAAS-TO-ALGAAS SELECTIVITY USING SF6 AND SICL4

被引：40
作者：
SALIMIAN, S
COOPER, CB
NORTON, R
BACON, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期
关键词：
D O I：
10.1063/1.98747
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1083 / 1085
页数：3
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