A 600V INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH MOS GATE STRUCTURE

被引：0
作者：
HARADA, M
MINATO, T
机构：
来源：
MITSUBISHI ELECTRIC ADVANCE | 1994年 / 66卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：17 / 19
页数：3
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