EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS

被引:45
作者
DAVENPORT, JW [1 ]
WATSON, RE [1 ]
PERLMAN, ML [1 ]
SHAM, TK [1 ]
机构
[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973
关键词
D O I
10.1016/0038-1098(81)90053-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:999 / 1002
页数:4
相关论文
共 27 条
[11]   INFLUENCE OF POLARIZATION FLUCTUATIONS ON ELECTRONIC-STRUCTURE OF MOLECULAR SOLIDS [J].
DUKE, CB ;
FABISH, TJ ;
PATON, A .
CHEMICAL PHYSICS LETTERS, 1977, 49 (01) :133-136
[12]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[13]   DANGLING BONDS IN III-V COMPOUNDS [J].
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1232-&
[14]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433
[15]   EFFECTIVE CHARGES AND PIEZOELECTRICITY [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1974, 10 (02) :767-770
[16]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[17]  
Huheey J. E., 1972, INORGANIC CHEM
[18]   SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].
LUBINSKY, AR ;
DUKE, CB ;
LEE, BW ;
MARK, P .
PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061
[19]   ELECTROSTATIC POTENTIAL IN SURFACE REGION OF AN IONIC-CRYSTAL [J].
PARRY, DE .
SURFACE SCIENCE, 1975, 49 (02) :433-440
[20]  
Pauling L., 1960, NATURE CHEM BOND