WEAK LOCALIZATION AND ELECTRON-ELECTRON INTERACTION IN THE LAYERED COMPOUND CuFeTe2

被引：0

作者：

Rivas-Mendoza, A. ^{[1
]}

Gonzalez-Jimenez, F. ^{[2
]}

Broto, J. M. ^{[3
]}

Rakotob, H. ^{[4
]}

Gonzalez, J. ^{[4
]}

机构：

[1] Univ Carabobo, Dept Fis, Valencia, Venezuela

[2] UCV, Dpto Fis, Lab Magnetismo, Caracas, Venezuela

[3] Univ Toulouse, UPS, INSA, CNRS UPR 3228,Lab Natl Champs Magnetiques Intense, F-31400 Toulouse, France

[4] ULA, Dept Fis, Merida, Venezuela

来源：

REVISTA CUBANA DE FISICA | 2011年 / 28卷 / 01期

关键词：

Localization effects 72.15. Rn; Hopping transport 72.20. Ee; Weak localization 73.20. Fz; Spin-density waves;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The study of the electrical properties of the layered compound CuFeTe2 shows that there are three well differentiated conduction regimes depending on the temperature. Below TSDW similar to 300 K the formation of a Spin Density Wave (SDW) state has been reported, in the frame of a metal to non metal transition. Below 100 K (similar to TSDW/3) the behavior of the electrical resistance as a function of temperature and magnetic, eld is attributable to the still present not condensed electrons (quasi particles) in the SDW state. At low temperatures (1.8 - 20K), low current (< 1 mA) and magnetic, eld (0<H <6 Tesla), the effects of weak localization and electronic interactions in two dimensions appear. At intermediate temperatures (20 < T < 100 K) a hopping conductivity behavior is observed.

引用

页码：14 / 17

页数：4