PHOTOLUMINESCENCE FROM ELECTRON-HOLE PLASMAS CONFINED IN SI/SI1-XGEX/SI QUANTUM-WELLS

被引:53
作者
XIAO, X [1 ]
LIU, CW [1 ]
STURM, JC [1 ]
LENCHYSHYN, LC [1 ]
THEWALT, MLW [1 ]
机构
[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
关键词
D O I
10.1063/1.107196
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.
引用
收藏
页码:1720 / 1722
页数:3
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