ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED-THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGES

被引：29

作者：

ANANTHARAM, V ^{[1
]}

BHAT, KN ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：939 / 945

页数：7

共 14 条

[1] BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0
[2] TRANSVERSE DIFFUSION IN PLANAR TRANSISTORS
BHAT, KN
ACHUTHAN, MK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) : 57 - 60
[3] CURRENT GAIN ENHANCEMENT IN LATERAL P-N-P TRANSISTORS BY AN OPTIMIZED GAP IN N+ BURIED LAYER
BHAT, KN
ACHUTHAN, MK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 205 - 214
[4] SURFACE BREAKDOWN IN SILICON PLANAR JUNCTIONS - COMPUTER-AIDED EXPERIMENTAL DETERMINATION OF CRITICAL-FIELD
BULUCEA, C
RUSU, A
POSTOLACHE, C
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 881 - 888
[5] CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS
FULOP, W
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 39 - &
[6] AVALANCHE BREAKDOWN CALCULATIONS FOR A PLANAR P-N JUNCTION
KENNEDY, DP
OBRIEN, RR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (03) : 213 - &
[7] BREAKDOWN VOLTAGE OF PLANAR SILICON JUNCTIONS
LEISTIKO, O
GROVE, AS
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 847 - &
[8] MULTIPLICATION IN COLLECTOR JUNCTIONS OF SILICON N-P-N AND P-N-P TRANSISTORS
MOLL, JL
SU, JL
WANG, ACM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 420 - &
[9] EXPERIMENTAL STUDY OF EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SI
SPEENEY, DV
CAREY, GP
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 177 - &
[10] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
SZE, SM
GIBBONS, G
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &

← 1 2 →