AN INSITU ELLIPSOMETRIC STUDY OF AQUEOUS NH4OH TREATMENT OF SILICON

被引：23

作者：

GOULD, G

IRENE, EA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096794

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1108 / 1112

页数：5

共 15 条

[1]

[Anonymous], SEMICONDUCTOR INT

[2] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365

[3] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].

Bruggeman, DAG .

ANNALEN DER PHYSIK, 1935, 24 (07) :636-664

[4] EFFECT OF SILICON SURFACE CLEANING PROCEDURES ON OXIDATION-KINETICS AND SURFACE-CHEMISTRY [J].

DELARIOS, JM ;

HELMS, CR ;

KAO, DB ;

DEAL, BE .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :17-24

[5] ERRORS ARISING FROM SURFACE ROUGHNESS IN ELLIPSOMETRIC MEASUREMENT OF REFRACTIVE INDEX OF A SURFACE [J].

FENSTERMAKER, CA ;

MCCRACKIN, FL .

SURFACE SCIENCE, 1969, 16 :85-+

[6] THE INFLUENCE OF SILICON SURFACE CLEANING PROCEDURES ON SILICON OXIDATION [J].

GOULD, G ;

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :1031-1033

[7] AN INSITU STUDY OF AQUEOUS HF TREATMENT OF SILICON BY CONTACT-ANGLE MEASUREMENT AND ELLIPSOMETRY [J].

GOULD, G ;

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) :1535-1539

[8] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].

GRUNTHANER, FJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112

[9] OBSERVATION OF ETCHING OF N-TYPE SILICON IN AQUEOUS HF SOLUTIONS [J].

HU, SM ;

KERR, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :414-&

[10] SURFACE ENERGY OF GERMANIUM AND SILICON [J].

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527

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