THIN BINARY IN1-XSBX FILMS PREPARED BY FLASH EVAPORATION

Thin binary In1-x, Sb(x) films of 1000 angstrom thickness have been prepared by flash evaporation. The antimony concentration x has been controlled to vary from 0.23 to 0.70. Grain sizes and homogeneity of concentration both before and after annealing at 250-degrees-C, 350-degrees-C, and 450-degrees-C were examined by both X-ray diffraction and transmission electron microscopy. Application of differential scanning calorimetry allows discussion of an atomic migration mechanism and phase transformation kinetics as a function of concentration. Also, the relationship between the microstructures and the optical properties, such as reflectances, transmittances and absorption coefficients at 830 nm, are presented. Both the grain sizes and the optical reflectances observed show that the In1-x, Sb(x) film with an antimony concentration x almost-equal-to 0.54 is a candidate for phase change optical recording.