CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON

被引：224
作者：
YATSURUGI, Y
AKIYAMA, N
ENDO, Y
NOZAKI, T
机构：
[1] KOMATSU ELECTR MET CO, HIRATSUKA, JAPAN
[2] INST PHYS & CHEM RES, WAKO, SAITAMA, JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 07期
关键词：
D O I：
10.1149/1.2403610
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：975 / 979
页数：5
相关论文
共 24 条
[1]   DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J].
BAKER, JA .
SOLID-STATE ELECTRONICS, 1970, 13 (11) :1431-&
[2]   SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].
BEAN, AR ;
NEWMAN, RC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&
[3]   INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED-PARTICLE ACTIVATION [J].
ENDO, Y ;
AKIYAMA, N ;
NOZAKI, T ;
YATSURUG.Y .
ANALYTICAL CHEMISTRY, 1972, 44 (14) :2258-&
[4]  
GRAFF K, TO BE PUBLISHED
[5]   COMPARISON OF INFRARED AND ACTIVATION-ANALYSIS RESULTS IN DETERMINING OXYGEN AND CARBON CONTENT IN SILICON [J].
GROSS, C ;
GAETANO, G ;
TUCKER, TN ;
BAKER, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :926-&
[6]  
HORN FH, 1967, J ELECTROCHEM SOC, V114, P1307
[7]   THE SOLUBILITY OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :214-216
[8]   NITROGEN IN SILICON [J].
KAISER, W ;
THURMOND, CD .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) :427-431
[9]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[10]   FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J].
KAISER, W ;
BRESLIN, J .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) :1292-1294
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