TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON

被引：5

作者：

JAGER, D ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER, INST APPL PHYS, D-4400 MUNSTER, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4413 / 4414

页数：2

共 12 条

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[8]

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