STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE

被引：32

作者：

SAXENA, RR ^{[1
]}

COOPER, CB ^{[1
]}

LUDOWISE, MJ ^{[1
]}

HIKIDO, S ^{[1
]}

SARDI, VM ^{[1
]}

BORDEN, PG ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90271-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：58 / 63

页数：6

共 16 条

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[2]

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[3] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

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LUDOWISE, MJ ;

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MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309

[4] OM VPE GROWTH OF AIGASB AND ALGAASSB [J].

COOPER, CB ;

SAXENA, RR ;

LUDOWISE, MJ .

ELECTRONICS LETTERS, 1980, 16 (23) :892-893

[5] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

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SEVERIN, PJW ;

BREKEL, CHJV ;

PEEK, HL .

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[6]

HIRTZ JP, 1980 P NATO INP WORK

[7]

LUDOWISE MJ, 22ND EL MAT C

[8]

MALONEY TJ, NRL N0017380C0179 CO

[9]

Manasevit H. M., 1972, Journal of Crystal Growth, V13-14, P306, DOI 10.1016/0022-0248(72)90175-3

[10] PERFORMANCE OF AN AL0.92GA0.08AS-AL0.14GA0.86AS SOLAR-CELL IN CONCENTRATED SUNLIGHT [J].

MOON, RL ;

JAMES, LW ;

VANDERPLAS, HA ;

NELSON, NJ .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :196-198

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