EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS

被引：44
作者：
AVEN, M
GARWACKI, W
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 05期
关键词：
D O I：
10.1149/1.2425774
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：401 / 407
页数：7
相关论文
共 13 条
[1]   GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].
ANDERSON, RL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287
[2]   SOME ELECTRICAL PROPERTIES OF ZINC TELLURIDE-CADMIUM SULFIDE HETEROJUNCTIONS [J].
AVEN, M ;
COOK, DM .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :960-&
[3]  
AVINOR M, 1959, THESIS U AMSTERDAM, P59
[4]   ASYMMETRIES IN SURFACE PROPERTIES OF (111) AND (111) FACES OF ZINC TELLURIDE [J].
DILLON, JA .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :669-&
[5]  
Holonyak Jr N., 1962, METALLURGY SEMICONDU, V15, P49
[6]   DOUBLE INJECTION WITH NEGATIVE RESISTANCE IN SEMI-INSULATORS [J].
HOLONYAK, N ;
BEVACQUA, SF ;
THOMAS, RC ;
ING, SW .
PHYSICAL REVIEW LETTERS, 1962, 8 (11) :426-&
[7]  
HOLONYAK N, 1962, P IRE DEC
[8]   DOUBLE INJECTION IN INSULATORS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1962, 125 (01) :126-&
[9]  
SABY JS, 1956, M SEMICOND RUGBY, P39
[10]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
12