DIAMOND DEPOSITION ON SILICON SURFACES HEATED TO TEMPERATURE AS LOW AS 135-DEGREES-C

被引：40

作者：

IHARA, M

MAENO, H

MIYAMOTO, K

KOMIYAMA, H

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, University of Tokyo, Bunkyo-ku

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.106382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond films were deposited on the silicon wafer at as low a temperature as 135-degrees-C by filament-assisted chemical vapor deposition. Silicon wafer substrate scratched with diamond powder was cooled by a stream of water flowing around a substrate holder. The films were identified as diamond by Raman spectroscopy. Clearly faceted crystals were shown in scanning electron micrographs.

引用

页码：1473 / 1475

页数：3

共 4 条

[1] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J].