CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP

被引:200
作者
PIANETTA, P
LINDAU, I
GARNER, CM
SPICER, WE
机构
来源
PHYSICAL REVIEW B | 1978年 / 18卷 / 06期
关键词
D O I
10.1103/PhysRevB.18.2792
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2792 / 2806
页数:15
相关论文
共 59 条
[1]   MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].
ARCHER, RJ ;
GOBELI, GW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :343-&
[2]   RELAXATION DURING PHOTOEMISSION AND LMM AUGER DECAY IN ARSENIC AND SOME OF ITS COMPOUNDS [J].
BAHL, MK ;
WOODALL, RO ;
WATSON, RL ;
IRGOLIC, KJ .
JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (03) :1210-1218
[3]  
BROWN FC, 1974, VACUUM ULTRAVIOLET R, P785
[4]   GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING [J].
CHYE, PW ;
BABALOLA, IA ;
SUKEGAWA, T ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1975, 35 (23) :1602-1604
[5]  
CHYE PW, 1977, 4TH ANN C PHYS COMP
[6]  
DERBENWICK GF, 1974, METHODS EXPT PHYSICS, V11, P89
[7]   SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY [J].
DONIACH, S ;
LINDAU, I ;
SPICER, WE ;
WINICK, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1123-1127
[8]   ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES [J].
DORN, R ;
LUTH, H ;
RUSSELL, GJ .
PHYSICAL REVIEW B, 1974, 10 (12) :5049-5056
[9]   ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J].
DUKE, CB ;
LUBINSKY, AR ;
LEE, BW ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :761-768
[10]   QUESTION OF SURFACE STATES ON CLEAVED GAAS(110) SURFACES [J].
FROITZHEIM, H ;
IBACH, H .
SURFACE SCIENCE, 1975, 47 (02) :713-716