THE DEPOSITION AND FILM PROPERTIES OF REACTIVELY SPUTTERED TITANIUM NITRIDE

被引:34
作者
ELLWANGER, RC [1 ]
TOWNER, JM [1 ]
机构
[1] SIGNET CORP,PHILIPS RES LABS SUNNYVALE,SUNNYVALE,CA 94088
关键词
D O I
10.1016/0040-6090(88)90261-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:289 / 304
页数:16
相关论文
共 28 条
[1]   ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].
ANDREWS, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984
[2]   TIN COATINGS ON STEEL [J].
BUHL, R ;
PULKER, HK ;
MOLL, E .
THIN SOLID FILMS, 1981, 80 (1-3) :265-270
[3]   FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J].
DELFINO, M ;
BROADBENT, EK ;
MORGAN, AE ;
BURROW, BJ ;
NORCOTT, MH .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :591-593
[4]   LIFETIME AND DRIFT VELOCITY ANALYSIS FOR ELECTROMIGRATION IN SPUTTERED AL FILMS, MULTILAYERS, AND ALLOYS [J].
GRABE, B ;
SCHREIBER, HU .
SOLID-STATE ELECTRONICS, 1983, 26 (10) :1023-&
[5]  
HOSACK HH, 1973, J APPL PHYS, V44, P8
[6]  
Iyer S. S., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P273, DOI 10.1109/IRPS.1984.362058
[7]  
JONES RE, 1985, 2ND P INT IEEE VLSI, P194
[8]  
KANEKO H, 1985, 1985 IEEE INT EL DEV, P208
[9]   INFLUENCE OF THE NITROGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC-SPUTTERED TITANIUM AND TITANIUM NITRIDE FILMS [J].
LEMPERIERE, G ;
POITEVIN, JM .
THIN SOLID FILMS, 1984, 111 (04) :339-349
[10]   APPLICATIONS OF WEAR-RESISTANT THICK-FILMS FORMED BY PHYSICAL VAPOR-DEPOSITION PROCESSES [J].
NAKAMURA, K ;
INAGAWA, K ;
TSURUOKA, K ;
KOMIYA, S .
THIN SOLID FILMS, 1977, 40 (JAN) :155-167